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22FFL isIntelAn improved version of the process developed by combining the 22-and 14-nm FinFET process has the advantages of low power consumption and low cost. After all, the 22-nm process has been produced for so many years. L in FFL stands for Low Leakage with lower leakage current and the index lies between the two processes. The transistor density is 18.8 million transistors per square millimeter, which is slightly better than the 22-nm process.
The 22FFL process will not be used to produce advanced processors, but it will find its place on other chips. Intel announced that it had produced MRAM (magnetoresistive RAM) using the 22FFL process. Now at VLSI 2019, Intel mentioned that the 22FFL process is ready to produce RRAM (variable resistance RAM).
Whether MRAM or RRAM chips, their characteristics are super performance, delay is comparable to memory, and is super long life and reliability. Writing times are tens of thousands of times, high temperature resistance, life of more than 10 years. But the problem is that the capacity of these chips is very low, usually 256 Mb, 512 Mb, and some can reach about 1 GB. Anyway, compared with conventional RAM and NAND, they are still very poor. Far away.